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茨城県の研究職（応用研究員）の求人76件応募資格・募集要項・仕事内容を見る
GaN Technology Development Engineer
- 給与
- 記載なし
- 勤務地
- 茨城県ひたちなか市
- 休日
- 記載なし
- 雇用形態
- 正社員
- オフィス出社
どんな仕事かAIによる生成
The GaN Technology Development Engineer develops advanced GaN device structures and drives technology development through electrical characterization and data-driven analysis. The role includes device concept and architecture development, process integration, device testing and troubleshooting, and collaboration across functional teams through product launch and technology qualification.
この求人に応募
応募資格
必須
- · B.S. above in Electrical Engineering, Semiconductor Physics/Engineering, or a related technical field w.i 3-7 years of experience in semiconductor device development, characterization, or technology engineering.
- · Understanding of semiconductor device physics. Experience with power device or SiC or GaN related technology development.
- · Hands-on experience in electrical characterization and device testing.
- · English communication skills for technical topic discussion with global teams
歓迎
- · Strong problem-solving skills and the ability to independently drive technical investigations.
- · Understanding of device reliability, degradation mechanisms, and qualification standard.
- · Similar with semiconductor test equipment, such as parameter analyzers, SMUs/CMUs, curve tracers, oscilloscopes, pulse generators, probe stations.
- · Analyzing electrical data using Python, JMP, or similar statistical tools.
募集要項最終確認 11/1
- 職種
- 研究職（応用研究員）
- 雇用形態
- Full-time
- 給与
- 記載なし
- 勤務地
- 茨城県ひたちなか市
- 働き方
- リモート No
- 経験年数
- 3年以上
- 学歴
- 大学卒業以上
- 掲載日
- 2026/10/13 14:51（20日前）
- 最終確認
- 2026/11/01 02:51（1日前）
仕事内容
Job Description
- We are seeking GaN Technology Development Engineer to drive next-generation high-efficiency power conversion technologies for emerging applications. In this role, you will participate throughout the full technology and product development cycle, from device concept and architecture development through technology qualification and product launch. Responsible for developing advanced GaN device structures and driving technology development through electrical characterization and data-driven analysis. A major focus will be the technology development including, transistor geometry design, process integration, troubleshooting for process and device-related issues through data analysis, and performing electrical testing to debug and resolve technical challenges.
- You will also work on new characterization methodologies to investigate device dynamic behavior. The ideal candidate combines device physics knowledge with laboratory testing environment, practical problem-solving skills. Coordinating works across multiple functional teams, including TCAD simulation, process development, reliability test, and product engineering, you will accelerate learning cycles and advance technology readiness for high-volume manufacturing.
- A key responsibility of this role is to serve as a technical contributor in
- (1) Device & PCM test structure design
- (2) Process Integration
- (3) hand-on device characterization and testing for technical trouble shooting.
- This is a high-visibility position offering the opportunity to make significant technical and business contributions while helping shape the future of GaN power semiconductor innovation
この求人は、ルネサスエレクトロニクス株式会社の採用ページの内容をAIが読み取って整理したものです。応募の前に採用ページの原文を確かめてください。データの集め方企業サイト
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職種と勤務地が似ている求人茨城県の研究職（応用研究員） 76件
茨城県の研究職（応用研究員）の求人をすべて見る（76件）募集元の採用ページから応募できます
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